| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a halftone type EUV (Extreme Ultra Violet) mask, a halftone type EUV mask manufacturing method, a halftone type EUV mask blank and a pattern transfer method simultaneously attaining wide selectiveness (high degree of freedom) of reflectance and high resistance to cleaning solvent with a relatively thin thickness and selecting the material and the structure of an easy-to-etch halftone film. <P>SOLUTION: The halftone type EUV mask includes a substrate, a high reflection part formed on the substrate and a low reflection part formed on the substrate and patterned. The low reflection part is a laminate of a Ta (tantalum) containing first layer and an Ru (ruthenium) containing second layer. <P>COPYRIGHT: (C)2010,JPO&INPIT |
