| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide: an image sensor that is an image sensor in which photoelectric converting films are stacked on a semiconductor substrate and which includes a new reading scheme, and which is capable of preventing the sensitivity from degrading accompanying the miniaturization of a pixel and of avoiding an increase in dark current; a method of driving the image sensor; and an image capturing apparatus. Ž<P>SOLUTION: The image sensor includes a semiconductor substrate 11, a photoelectric converting film 20 that is formed on the semiconductor substrate 11 and which generates charges corresponding to incident light, and a plurality of pixels. Each pixel is formed of a floating gate FG electrically connected to the photoelectric converting film 20, and a transistor Tr with a varying threshold voltage from which a drain current begins to increase when the potential of the floating gate FG is changed. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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