METHOD FOR FORMING THROUGH-BASE WAFER VIAS IN FABRICATION OF STACKED DEVICES

摘要

PURPOSE: A method for forming through-base wafer vias in a manufacturing of stacked devices are provided to easily remove a base wafer material and a metal using a chemical-mechanical planarization(CMP). CONSTITUTION: A first base wafer including a front side and a rear side is prepared. The front side of the base wafer on which an integrated circuit is formed is fixed on a carrier. The rear side of the base wafer contacts to a grinding pad and a first CMP slurry. The rear side of the base wafer is grinded until at least one conductive via is exposed. The first base wafer is grinded using the first CMP slurry with 7psi or less down force and 5000 or more angstrom speed.