发明名称 SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To solve such a problem that a current density in a chip becomes non-uniform because, in a bipolar transistor of a discrete type having a two-layer electrode structure, a first-layer emitter and base electrodes are arranged below a second-layer base electrode, and the first-layer electrode is smaller in thickness than the second-layer electrode, so that a current path flowing to the second-layer emitter electrode from an operation region (emitter region) below the second base electrode via the first-layer emitter electrode becomes larger in resistance than that below the second emitter electrode through which current flows to nearly upward direction. <P>SOLUTION: The first base electrodes and the first emitter electrodes are all formed like strips, and are alternately arranged in parallel, and the area of the second emitter electrode is expanded to be larger than that of the second base electrode. With this configuration, the number of current paths increases in each of which a current is pulled up almost straight from the emitter region to the second emitter electrode through the first emitter electrodes, thereby preventing the current densities of the entire chip from becoming uneven. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2010080925(A) 申请公布日期 2010.04.08
申请号 JP20090166992 申请日期 2009.07.15
申请人 SANYO ELECTRIC CO LTD;SANYO SEMICONDUCTOR CO LTD 发明人 TAKAHASHI KAZUYA
分类号 H01L21/331;H01L29/417;H01L29/732 主分类号 H01L21/331
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