| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of forming a mask pattern that discriminates the formation history of patterns of workpiece materials formed, and to provide a method of manufacturing a semiconductor device. Ž<P>SOLUTION: A sidewall pattern is formed on a long sidewall of a line part of a first line-and-space pattern on a foundation region; a protective pattern that covers and protects part of the line part of the first line-and-space pattern is formed on the first line-and-space pattern; and the protective pattern is used as a mask to wet-etch the line part of the first line-and-space pattern and remove it, thus forming a second line-and-space pattern constructed by a residual pattern portion that leaves behind the line part of the first line-and-space pattern, a first space that is a region from which the line part of the first line-and-space pattern is removed, and a second space that is a region between sidewall patterns adjoining via the space of the first line-and-space pattern. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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