| 摘要 |
PURPOSE: An image sensor and a method for manufacturing the same are provided to minimize the size of the image sensor by controlling a distance between a photodiode and a reflective surface through an isolation layer. CONSTITUTION: A square trench is formed on a semiconductor substrate(100). An incline unit with an incline angle with one side of the trench is formed inside the trench. A photodiode is formed on a semiconductor substrate region between trenches. An isolation layer(130) is formed on both sides of the photodiode among the semiconductor substrate region between the trenches. A reflective layer(110) is formed on the surface of the incline unit.
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