PURPOSE: A method for manufacturing a light emitting diode is provided to prevent deformation which is generated during a junction process under a high pressure using a support substrate of which thermal expansion coefficient is the same as a growth substrate. CONSTITUTION: A metal pattern(40) is formed on semiconductor layers. A second substrate is welded on a metal pattern. A first substrate is separated from the semiconductor layers. Light emitting cells(30) which are spaced apart from each other are formed by patterning the semiconductor layers in order to expose the metal pattern. Each light emitting cells of the second substrate is scribed by a laser. The scribed second substrate is broke in order to be separated into separate devices.
