发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
<P>PROBLEM TO BE SOLVED: To increase the mechanical strength of a semiconductor device having a three-dimensional wiring structure by increasing the bonding strength of a through via and an electrode pad. <P>SOLUTION: A first semiconductor chip 100 and a second semiconductor chip 200 are bonded. An electrode pad 104 is formed in a surface portion of the first semiconductor chip 100. A through via 114 is formed in the second semiconductor chip 200. The electrode pad 104 is formed with a hollowed portion 111, and the bottom part of the through via 114 is embedded in the hollowed portion 111. <P>COPYRIGHT: (C)2010,JPO&INPIT |
申请公布号 |
JP2010080897(A) |
申请公布日期 |
2010.04.08 |
申请号 |
JP20080250805 |
申请日期 |
2008.09.29 |
申请人 |
PANASONIC CORP |
发明人 |
TORASAWA NAOKI;HINOMURA TORU |
分类号 |
H01L25/065;H01L21/3205;H01L23/52;H01L25/07;H01L25/18 |
主分类号 |
H01L25/065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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