SOLID-STATE IMAGING DEVICE, SEMICONDUCTOR DEVICE, AND METHODS OF MANUFACTURING THE DEVICES

摘要

PROBLEM TO BE SOLVED: To enhance the withstand voltage of a vertical transistor.

SOLUTION: When forming the vertical transistor, a gate electrode 22g is formed of a semiconductor in which conductive impurities are diffused. The impurities are diffused, in the gate electrode 22g, so that the impurity concentration on the bottom side disposed in a substrate 101 is lower than the impurity concentration on the front side of the substrate.

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