| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, reducing the amount of Mn residing in Cu wiring. Ž<P>SOLUTION: A sacrifice layer 41 made of an insulating material including Si and O is laminated on an alloy film 18. After the lamination of the sacrifice layer 41, heat treatment is performed. Since a second insulating layer 6 and the sacrifice layer 41 include Si and O, the elements Si, O and Mn are combined on the interface between the second insulating layer 6 and the alloy film 18 and on the interface between the alloy film 18 and the sacrifice layer 41 when heat treatment is performed, thus forming a second barrier film 13 and a reaction generation film 42 made of MnSiO, respectively. When Mn included in the alloy film 18 is used for forming the reaction generation film 42, the amount of Mn residing in the alloy film 18 without contributing to the formation of the second barrier film 13 after the second barrier film 13 is formed, is reduced. Thus, the amount of Mn diffused to a Cu layer 20 laminated on the alloy film 18 is reduced, which reduces the amount of Mn residing in second Cu wiring made of the Cu layer 20. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
|
