| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing a thermal load on an epitaxial crystal layer in a fabrication process, and a method of fabricating the semiconductor device. Ž<P>SOLUTION: The semiconductor device comprises: a first transistor including a first gate electrode formed on a semiconductor substrate via a first gate insulating film, a first channel region formed under the first gate insulating film in the semiconductor substrate, and a first epitaxial crystal layer consisting of first crystals formed on both sides of the first channel region in the semiconductor substrate; and a second transistor having a different conductivity type from that of the first transistor including a second gate electrode formed on the semiconductor substrate via a second gate insulating film, a second channel region formed under the second gate insulating film in the semiconductor substrate, a second epitaxial crystal layer consisting of second crystals formed on both sides of the second channel region, and a third epitaxial crystal layer consisting of the first crystals formed on the second epitaxial crystal layer. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
|
