发明名称 MODERATE DENSITY, LOW DENSITY, AND EXTREMELY LOW DENSITY SINGLE CRYSTAL ALLOYS FOR HIGH AN2 APPLICATIONS
摘要 A single crystal alloy for high AN2 applications has a composition consisting essentially of from 4.0 to 10 wt % chromium, from 1.0 to 2.5 wt % molybdenum, up to 5.0 wt % tungsten, from 3.0 to 8.0 wt % tantalum, from 5.5 to 6.25 wt % aluminum, from 6.0 to 17 wt % cobalt, up to 0.2 wt % hafnium, from 4.0 to 6.0 wt % rhenium, from 1.0 to 3.0 wt % ruthenium, and the balance nickel. Further, these single crystal alloys have a total tungsten and molybdenum content in the range of from 1.0 to 7.5 wt %, preferably from 2.0 to 7.0 wt %, a total refractory element content in the range of from 9.0 to 24.5 wt %, preferably from 13 to 22 wt %, a ratio of rhenium to a total refractory element content in the range of from 0.16 to 0.67, preferably from 0.20 to 0.45, a density in the range of from 0.300 to 0.325 lb/in3, and a specific creep strength in the range from 106×103 to 124×103 inches. These alloys provide (a) increased creep strength for a given density and (b) specific creep strengths as high as or higher than all 2nd generation single crystal alloys with a significant decrease in density.
申请公布号 US2010086411(A1) 申请公布日期 2010.04.08
申请号 US20090634008 申请日期 2009.12.09
申请人 UNITED TECHNOLOGIES CORPORATION 发明人 SEETHARAMAN VENKATARAMA K.;CETEL ALAN D.
分类号 F01D5/28;C22C19/05 主分类号 F01D5/28
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