| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method and a capacitative element manufacturing method surely removing residues adhered to an upper electrode film to obtain a desired characteristic regardless of micropatterning. SOLUTION: The semiconductor device manufacturing method includes steps of forming a lower electrode film 2, a ferroelectric film 3 and the upper electrode film 4 above a substrate, patterning the film 4, patterning the film 3, wet-treating residues 13a, 13b adhered to the film 4 after patterning the film 3 and dry-etching the residues 13a, 13b adhered to the film 4 after wet treatment. COPYRIGHT: (C)2010,JPO&INPIT |
