发明名称 MATERIAL FOR FORMATION OF PROTECTIVE FILM, METHOD FOR FORMATION OF PHOTORESIST PATTERN, AND SOLUTION FOR WASHING/REMOVAL OF PROTECTIVE FILM
摘要 Disclosed are: a material for forming a protective film to be laminated on a photoresist film, which can prevent the contamination of an exposing device with an outgas generated from the photoresist film, which has little influence on the environment, which has a high water repellent property, which sparingly causes mixing with the photoresist film, and which can form a high-resolution photoresist pattern; a method for forming a photoresist pattern; and a solution for washing/removing a protective film. Specifically disclosed are: a material for forming a protective film, which comprises (a) a non-polar polymer and (b) a non-polar solvent; a method for forming a photoresist pattern by using the material; and a solution for washing/removing a protective film, which is intended to be used in the method.
申请公布号 US2010086879(A1) 申请公布日期 2010.04.08
申请号 US20070441514 申请日期 2007.09.13
申请人 TAKAYAMA TOSHIKAZU;ISHIDUKA KEITA;HADA HIDEO;YOKOI SHIGERU 发明人 TAKAYAMA TOSHIKAZU;ISHIDUKA KEITA;HADA HIDEO;YOKOI SHIGERU
分类号 G03F7/20;C08K5/01;C08L55/00;G03F7/00 主分类号 G03F7/20
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