发明名称 |
ZINC SULFIDE SUBSTRATES FOR GROUP III-NITRIDE EPITAXY AND GROUP III-NITRIDE DEVICES |
摘要 |
A semiconductor structure includes a substrate which may be formed from a ZnS single crystal of wurtzite (2H) structure with a predetermined crystal orientation, and which has a first surface and a second surface. The structure includes a layer of a group III-nitride crystalline material deposited as an epitaxial layer on the first surface of the substrate. In one embodiment, the group III-nitride deposit is epitaxially grown using a MOCVD (or MOVPE) technique or a HVPE technique or a combination thereof. There may be a mask and/or a buffer layer on the first surface and/or a protective layer on the second surface.
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申请公布号 |
US2010084664(A1) |
申请公布日期 |
2010.04.08 |
申请号 |
US20090574092 |
申请日期 |
2009.10.06 |
申请人 |
FAIRFIELD CRYSTAL TECHNOLOGY, LLC |
发明人 |
WANG SHAOPING |
分类号 |
H01L33/00;H01L21/36;H01L29/12 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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