Verfahren zur Erzeugung von lokalen Kontakten

摘要

#CMT# #/CMT# The device has a surface passivated-layer of a semiconductor material formed by plasma etching through openings (45) of a stretched foil (7). The stretched foil serves as a masking for separation processes of hetero contacts, transparent conductive oxide or metals and/or plasma processes. A contact region is exposed to hydrogen plasma after the formation of the layer and is heated to a temperature between 300 [deg] C and 600 [deg] C. #CMT# : #/CMT# An independent claim is also included for a method for producing a local-hetero contact. #CMT#USE : #/CMT# Used for producing a local-hetero contact for a high-power solar cell. #CMT#ADVANTAGE : #/CMT# Device is designed such that it provides local hetero contact structures with small saturation currents, thus increasing the efficiency of high-power solar cells . The device allows remaining surfaces of the wafers to be surface passivated in a well manner, thus reducing the recombination losses. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The figure shows a device for producing a local-hetero contact. 5 : Arched carrier 7 : Stretched foil 8 : Passivated wafer 9 : Tractive forces 45 : Openings.