DEVICE AND METHOD FOR DEPOSITING HARD BIAS STACK, AND DEVICE AND METHOD FOR MANUFACTURING MAGNETIC SENSOR STACK

摘要

Provided are a method and a device for forming a good hard bias stack with high coercive force on a graded or vertical junction wall surface of a patterned magnetoresistive element by using ionization PVD. A hard bias film is formed by applying a magnetic field of 30 mT (300 G) or less to the surface of a target under a gas pressure of 20 Pa or less created by introducing Ne into a processing space; depositing a bcc foundation layer by supplying electric power of 60 MHz or more to a first cathode unit (31) and sputtering a first target material while rotating a substrate holder (22) at an initial height; depositing a magnetic layer by supplying electric power of 60 MHz or more to a second cathode unit (32) and sputtering a second target material of an hcp alloy while rotating the substrate holder (22) at a second height; and depositing a capping layer by supplying electric power of 60 MHz or more to a third cathode unit (33) and sputtering a third target material while rotating the substrate holder (22) at a third height.