发明名称 |
Composition for forming silicon-containing film, silicon-containing film-formed substrate and patterning process |
摘要 |
There is disclosed a thermosetting composition for forming a silicon-containing film to form a silicon-containing film formed in a multilayer resist process used in lithography, including at least (A) a silicon-containing compound obtained by hydrolyzing and condensing a hydrolyzable silicon compound using an acid as a catalyst, (B) a thermal crosslinking accelerator (C) a monovalent or bivalent or more organic acid having 1 to 30 carbon atoms, (D) trivalent or more alcohol and (E) an organic solvent. There can be provided a composition for a silicon-containing film which can form a good pattern in a photoresist film, can form a silicon-containing film for an etching mask having a good dry etching resistance, can give a good storage stability and can be delaminated with a solution used in a delamination process in a multilayer resist process used for lithography, a substrate on which the silicon-containing film is formed, and further a method for forming a pattern. |
申请公布号 |
EP2172807(A1) |
申请公布日期 |
2010.04.07 |
申请号 |
EP20090012327 |
申请日期 |
2009.09.29 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
OGIHARA, TSUTOMU;UEDA, TAKAFUMI;YANO, TOSHIHARU |
分类号 |
G03F7/075;C08L83/04;C09D183/04;G03F7/11 |
主分类号 |
G03F7/075 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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