发明名称 |
A SEMICONDUCTOR, AN APPARATUS AND A METHOD FOR PRODUCING IT |
摘要 |
PURPOSE: A semiconductor, an apparatus and a method for producing the same are provided to form an etching pattern which is finer than a resister pattern by forming a passivation film on a glass substrates using a SiN film. CONSTITUTION: Supply tubes(71, 72) supply the silicon gas including the hydrogen component or the halogen element to a first chamber. A supply pipe(74) supplies the nitrogen gas to the first chamber. A supply tube(75) supplies the inactive gas to the first chamber. The supply tubes are connected to a collective pipe(13) through a valve(16) and a mass flow controller(15). A valve(14) for replacing the gas is installed on the collective pipe.
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申请公布号 |
KR20100036180(A) |
申请公布日期 |
2010.04.07 |
申请号 |
KR20090088379 |
申请日期 |
2009.09.18 |
申请人 |
ADEKA CORPORATION;NANOMATERIAL LABORATORY CO., LTD. |
发明人 |
ONOZAWA KAZUHISA;SHIOTANI KIMI |
分类号 |
C30B29/38;H01L21/205 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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