发明名称 A SEMICONDUCTOR, AN APPARATUS AND A METHOD FOR PRODUCING IT
摘要 PURPOSE: A semiconductor, an apparatus and a method for producing the same are provided to form an etching pattern which is finer than a resister pattern by forming a passivation film on a glass substrates using a SiN film. CONSTITUTION: Supply tubes(71, 72) supply the silicon gas including the hydrogen component or the halogen element to a first chamber. A supply pipe(74) supplies the nitrogen gas to the first chamber. A supply tube(75) supplies the inactive gas to the first chamber. The supply tubes are connected to a collective pipe(13) through a valve(16) and a mass flow controller(15). A valve(14) for replacing the gas is installed on the collective pipe.
申请公布号 KR20100036180(A) 申请公布日期 2010.04.07
申请号 KR20090088379 申请日期 2009.09.18
申请人 ADEKA CORPORATION;NANOMATERIAL LABORATORY CO., LTD. 发明人 ONOZAWA KAZUHISA;SHIOTANI KIMI
分类号 C30B29/38;H01L21/205 主分类号 C30B29/38
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