| 摘要 |
<P>PROBLEM TO BE SOLVED: To form a buried pattern which maintains high CMP rate and is excellent in reliability by reducing an etching rate sufficiently. Ž<P>SOLUTION: The polishing liquid for metal contains: an oxidizing agent of metal (1); a metal oxide dissolving agent (2); a first protective film forming agent (3) which is amino acid or azoles and with which a protective film is formed on a surface of a metal film by physical absorption and/or formation of chemical bonding; second protective film forming agent (4) which is polyacrylic acid or polyamide acid or salt of polyamide acid and assists the first protective film forming agent to form a protective film, and water (5). Ž<P>COPYRIGHT: (C)2005,JPO&NCIPI Ž |
