| 摘要 |
<p>PURPOSE: A method for forming a mask pattern, a method for forming a fine pattern, and a thin film forming device are provided to reduce manufacturing costs by forming a silicon oxide layer on a pattern organic layer. CONSTITUTION: A resist layer is formed on a thin film of a semiconductor substrate(S12). The resist layer is processed to a resist pattern with a preset pitch using a photolithography(S13). The resist pattern is processed(S14). An oxide layer is formed on the thin film and the resist pattern by supplying source gas, oxide radical or gas containing oxygen(S15).</p> |
