发明名称 |
INHIBITING DAMAGE FROM DICING AND BEOL PROCESSING |
摘要 |
A semiconductor product comprises a semiconductor substrate having a top surface and a bottom surface including a semiconductor chip. The semiconductor substrate has a top surface and a perimeter. A barrier is formed in the chip within the perimeter. An Ultra Deep Isolation Trench (UDIT) is cut in the top surface of the chip extending down therein between the perimeter and the barrier. A ILD structure with low-k pSICOH dielectric and hard mask layers is formed over the substrate prior to forming the barrier and the UDIT. The ILD structure interconnection structures can be recessed down to the substrate aside from the UDIT. |
申请公布号 |
KR20100036241(A) |
申请公布日期 |
2010.04.07 |
申请号 |
KR20097025624 |
申请日期 |
2008.04.29 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
FAROOQ MUKTA G.;HANNON ROBERT;MELVILLE IAN D.W.;LANE MICHAEL W.;LIU XIAO HU;SHAW THOMAS M. |
分类号 |
H01L21/301 |
主分类号 |
H01L21/301 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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