| 摘要 |
Provided is an insulated gate bipolar transistor (IGBT) which occupies a small area and in which a thermal breakdown is suppressed. The IGBT includes: an n-type semiconductor layer (3); and a collector part formed in a surface portion of the n-type semiconductor layer (3). The collector part includes: an n-type buffer region (14); and a p + -type collector region (15) and an n + -type contact region (18) which are formed in the n-type buffer region (14).
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