PURPOSE: A light emitting device is provided to increase the external quantum efficiency by reducing total reflection within a light emitting apparatus. CONSTITUTION: A semiconductor layer(120) is formed on upper part a base substrate(110). An active region(130) is formed on upper part the semiconductor layer. A second semiconductor layer(140) is formed on upper part of the active layer. The second semiconductor layer forms a first protrusion pattern on the top. The first protrusion pattern is of a pyramidal shape.
申请公布号
KR20100036038(A)
申请公布日期
2010.04.07
申请号
KR20080095467
申请日期
2008.09.29
申请人
SEOUL SEMICONDUCTOR CO., LTD.
发明人
LEE, SANG CHEOL;PARK, KWANG IL;SEO, TAE WON;HWANG, WOONG JOON