发明名称 HIGH-VOLTAGE GENERATION CIRCUIT AND SEMICONDUCTOR STORAGE DEVICE PROVIDED THEREWITH AND SEMICONDUCTOR INTEGRATED DEVICE
摘要 A voltage generation circuit includes a pump circuit, a first unit, a first switch, and a first capacitor. The pump circuit generates a first voltage and outputs the first voltage to a first node. The first unit includes a first resistance unit to output a second voltage at a second node. The first switch connects the second node and an output terminal. A resistance value of a parasitic resistance formed in an interconnection from the second node to the output terminal is smaller than a resistance value of the first resistance unit. The first capacitor includes one of electrodes and the other electrodes. The one of electrodes is connected to an interconnection connecting the second node and the first switch element. The other of the electrodes is grounded. A capacitance of the first capacitor element is larger than a capacitance connected to the output terminal.
申请公布号 US2010085114(A1) 申请公布日期 2010.04.08
申请号 US20090564359 申请日期 2009.09.22
申请人 SAKO MARIO;KUWAGATA MASAAKI;CHIN GYOSHO 发明人 SAKO MARIO;KUWAGATA MASAAKI;CHIN GYOSHO
分类号 G05F1/10 主分类号 G05F1/10
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