| 摘要 |
An atomic layer deposition apparatus is provided. The atomic layer deposition apparatus includes a reaction chamber, a first heater, a second heater, a first gas supply system, a second gas supply system and a vacuum system. The vacuum system is connected to the reaction chamber. The reaction chamber includes a preheating chamber and a plating chamber connected to the preheating chamber. The first heater is for heating the preheating chamber. The first gas supply system is connected to the preheating chamber. The second heater is for heating the plating chamber. The second gas supply system is connected to the plating chamber.
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