| 摘要 |
<p>1,113,916. Semi-conductor device. DOW CORNING CORPORATION. 17 Aug., 1966 [5 Jan., 1966], No. 36879/66. Heading H1K. A silicon semi-conductor element 17 has layers 19 and 20 of SiC formed on it by thermally decomposing (CH 3 ) 2 SiCl 2 in H 2 at 1100- 1400‹ C. to give a layer 3 Áthick. Layers 21 and 22 of Cu, 1000 A thick are then formed by vacuum deposition. The coated element 17 is then soldered to a heat sink 11 of Cu and a Cu terminal 15. The heat sink is cup-shaped and has a threaded connecting stud (12). The terminal 15 is connected via a braided conductor (16) to a metallic stud (14) and a threaded connector (13). The heat sink may be filled with encapsulating resin (18, Fig. 1, not shown). The layer of silicon carbide is said to aid heat dissipation and prevent stresses due to unequal thermal contraction and expansion.</p> |
