| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of realizing excellent electrical connection between an element electrode and a metal wiring, capable of securing excellent reliability, and also, and capable of realizing high-speed transmission of a signal between the semiconductor device and external equipment without impeding the miniaturization of a semiconductor chip in the semiconductor device having a rewiring structure; and to provide its manufacturing method. <P>SOLUTION: The semiconductor chip 10 has a semiconductor element forming region 11 and an element arrangement inhibition region 12. The element electrode 13 is composed of a region 13a for connection, which is connected with the metal wiring 17 for connecting to a metal bump 20 being a terminal for external connection, and a region 13b for inspection which is connected with a probe for inspecting electric characteristics of the semiconductor chip 10. The region 13a for connection of the element electrode 13 is arranged in the semiconductor element forming region 11. The region 13b for inspection of the element electrode 13 is formed in the element arrangement inhibition region 12. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
