Method of manufacturing of embedded non-volatile semiconductor memory cells

摘要

Production of embedded non-volatile semiconductor storage cells comprises forming a first insulating layer (2) on a substrate (1) in a high voltage region, a storage region and a logic region; removing the insulating layer in the storage region; forming a second insulating layer (3) in the high voltage region, storage region and logic region; forming and structuring a charge-storing layer (5) with a third insulating region (6) in the storage region; removing the insulating layers and the charge-storing layer; forming a fourth insulating layer in the high voltage region, storage region and logic region; and forming and structuring a conducting control layer (8). Preferred Features: A 20-25 nm thick oxide layer is deposited in the first step. A 7-10 nm thick tunnel oxide layer is thermally formed in the third step.