| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problem of a bipolar transistor, wherein the base-to-emitter distance must be reduced to realize ultra-fine structure in the operating region, and the distance between metal patterns as the electrode is limited in the photography, and overlap between contact hole and electrode must be acquired for employment of a two-layered-electrode structure, thereby accelerating realization of ultra-fine structure. <P>SOLUTION: The portions adjacent to a base electrode layer and an emitter electrode layer as the second layer are respectively formed in the concave and convex shapes, and an emitter and a base contact hole are provided only to the convex portion. Namely, the contact holes are not provided to the adjacent locations but are allocated through mutual displacement. Accordingly, ample overlap can be ensured between the contact hole and electrode, and moreover, separation distance between the base electrode and emitter electrode of the second layer can also be ensured. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
