Method and device for recording physical parameters
摘要
<p>The method involves arranging a sensor (2) on a base (3), for measuring physical parameter of wafer (1). The load acting on the sensor is transformed into bending force by the piezoelectric plastic film of the sensor. An interlayer (9) is formed between the sensor and the base. The thermal load acting on the sensor is absorbed by the interlayer. An independent claim is included for device for measuring physical parameter of wafer.</p>
申请公布号
EP2172757(A1)
申请公布日期
2010.04.07
申请号
EP20080017379
申请日期
2008.10.02
申请人
RENA GMBH
发明人
DECHANT-WAGNER, ROLAND;SCHWECKENDIEK, JUERGEN;MUENCH, MICHAEL;SINGER, FERDINAND;STICH, SEBASTIAN;BERINGER, KLAUS;PABST, CHRISTOPH;KREMPEL, SANDRO;LINDNER, GERHARD