<p>A semiconductor device (300) comprises a switch ing element (310). The switching element (310) comprises a first channel terminal (312), a second channel terminal (314) and a switching terminal (316). One of the first and second channel terminals (312) provides a reference terminal and the switching element (310) is arranged such that an impedance of the switching element (310) between the first channel terminal (312) and second channel terminal (314) is dependant upon a voltage across the switching terminal (3 16) and the reference terminal (312). The semiconductor device (300) further comprises a first resistance element (340) operably coupled between the first channel terminal (312) and the switching terminal (316) and a second resistance element (350) operably coupled between the swit ching terminal (316) and the second channel terminal (314) of the semiconductor device (300). When a negative current is encountered at the first channel terminal (312), t he negative current causes both a voltage drop across the switching terminal (316) and the first channel terminal (312) and a voltage drop across the second channel terminal (314) and the switching terminal (316).</p>
申请公布号
WO2010038101(A1)
申请公布日期
2010.04.08
申请号
WO2008IB55323
申请日期
2008.10.03
申请人
FREESCALE SEMICONDUCTOR, INC.;LAINE, JEAN PHILIPPE;BESSE, PATRICE;HUOT-MARCHAND, ALEXIS
发明人
LAINE, JEAN PHILIPPE;BESSE, PATRICE;HUOT-MARCHAND, ALEXIS