发明名称 |
MOSFET structure and method of manufacture |
摘要 |
A method of forming a portion (10) of a compound semiconductor MOSFET structure comprises forming a compound semiconductor layer structure (14) and an oxide layer (20) overlying the same. Forming the compound semiconductor structure (14) includes forming at least one channel material (16) and a group-III rich surface termination layer (18) overlying the at least one channel material. Forming the oxide layer (20) includes forming the oxide layer to overlie the group-III rich surface termination layer and comprises one of (a) depositing essentially congruently evaporating oxide of at least one of (a(i)) a ternary oxide and (a(ii)) an oxide more complex than a ternary oxide and (b) depositing oxide molecules, with use of at least one of (b(i)) a ternary oxide and (b(ii)) an oxide more complex than a ternary oxide.
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申请公布号 |
US7692224(B2) |
申请公布日期 |
2010.04.06 |
申请号 |
US20070864274 |
申请日期 |
2007.09.28 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
DROOPAD RAVINDRANATH;PASSLACK MATTHIAS |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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