| 摘要 |
Non uniform ion implantations in a pendulum type of ion implantation are mitigated by adjusting movement of a wafer according to a corresponding non uniform function. More particularly, a non uniform ion implantation function is obtained by measuring and/or modeling ion implantations. Then, movement of a wafer along a second non arcuate scan path is adjusted according to the non uniform ion implantation function to facilitate uniform ion implantations.
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