Source-biased SRAM cell with reduced memory cell leakage

摘要

A Static Random Access Memory (SRAM) cell having a source-biasing mechanism for leakage reduction. In standby mode, the cell's wordline is deselected and a source-biasing potential is provided to the cell. In read mode, the wordline is selected and responsive thereto, the source-biasing potential provided to the cell is deactivated. Upon completion of reading, the source-biasing potential is re-activated.