发明名称 Nonvolatile memory and semiconductor device including nonvolatile memory
摘要 An object is to provide a nonvolatile memory with reduced power consumption. The nonvolatile memory includes a memory element that has a low resistance state and a high resistance state, a writing circuit, a resistance element, a voltage source input terminal that inputs a writing voltage to the writing circuit, a bit line driver circuit that selects whether the memory element is connected to the writing circuit, and a word line driver circuit that selects whether or not writing is done in the memory element. With such as structure, power consumption during writing can be reduced, and a nonvolatile memory with low power consumption can be realized. Further, with such a nonvolatile memory, an active type wireless tag with a long lifetime of a battery or a passive type wireless tag with a wide communication range in which writing to a memory is possible, can be realized.
申请公布号 US7692999(B2) 申请公布日期 2010.04.06
申请号 US20070003280 申请日期 2007.12.21
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD 发明人 KATO KIYOSHI
分类号 G11C5/14 主分类号 G11C5/14
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