发明名称 |
Gallium-nitride based light emitting diode light emitting layer structure |
摘要 |
A number of light-emitting layer structures for the GaN-based LEDs that can increase the lighting efficiency of the GaN-based LEDs on one hand and facilitate the growth of epitaxial layer with better quality on the other hand are provided. The light-emitting layer structure provided is located between the n-type GaN contact layer and the p-type GaN contact layer. Sequentially stacked on top of the n-type GaN contact layer is the light-emitting layer containing a lower barrier layer, at least one intermediate layer, and an upper barrier layer. That is, the light-emitting layer contains at least one intermediate layer interposed between the upper and lower barrier layers. When there are multiple intermediate layers inside the light-emitting layer, there is an intermediate barrier layer interposed between every two immediately adjacent intermediate layers.
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申请公布号 |
US7692181(B2) |
申请公布日期 |
2010.04.06 |
申请号 |
US20060458392 |
申请日期 |
2006.07.19 |
申请人 |
FORMOSA EPITAXY INCORPORATION |
发明人 |
YU CHENG-TSANG;WU LIANG-WEN;WEN TZU-CHI;CHIEN FEN-REN |
分类号 |
H01L31/00;H01L33/06;H01L33/32 |
主分类号 |
H01L31/00 |
代理机构 |
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