发明名称 |
Immersion lithography edge bead removal |
摘要 |
A method of performing immersion lithography on a semiconductor wafer is provided. The method includes providing a layer of resist onto a surface of the semiconductor wafer. Next, an edge-bead removal process spins the wafer at a speed greater than 1000 revolutions per minute and dispenses solvent through a nozzle while the wafer is spinning. Then, the resist layer is exposed using an immersion lithography exposure system.
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申请公布号 |
US7691559(B2) |
申请公布日期 |
2010.04.06 |
申请号 |
US20060337986 |
申请日期 |
2006.01.24 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHANG CHING-YU;KE C. C.;YU VINCENT |
分类号 |
G03F7/00;G03F7/004 |
主分类号 |
G03F7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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