发明名称 Solid state imaging device and manufacturing method thereof
摘要 A light shielding film, an insulating layer, a planarizing layer, and a color filter are formed consecutively on a semiconductor substrate having plural photodiodes in a matrix arrangement. A transparent conductive film is formed on the color filter, and micro-lenses are formed directly on the conductive film such that they reside above each photodiode. Static charges on a surface of each micro-lens are discharged to the conductive film, and static charge buildup on the micro-lenses is therefore prevented.
申请公布号 US7692260(B2) 申请公布日期 2010.04.06
申请号 US20070907791 申请日期 2007.10.17
申请人 FUJIFILM CORPORATION 发明人 TAKAO HIROAKI
分类号 H01L31/0232;H01L27/14;H04N5/335;H04N5/369;H04N5/372 主分类号 H01L31/0232
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