发明名称 |
III-V nitride semiconductor device comprising a concave shottky contact and an ohmic contact |
摘要 |
A two-dimensional carrier is generated in the vicinity of an interface that is a hetero interface between a semiconductor layer and a semiconductor layer. Two concave portions are formed so as to extend from a primary surface as far as the interface. An electrode that is made of metal and provides a Schottky junction with the semiconductor layers is formed on a bottom surface and a side surface of the concave portion. An electrode that is made from metal and provides a low resistance contact with the semiconductor layers and is also in low resistance contact therewith is formed on the bottom surface and side surface of the concave portion. As a result, a semiconductor device is provided in which contact resistance between the electrodes and the semiconductor layers is reduced and high frequency characteristics are improved.
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申请公布号 |
US7692298(B2) |
申请公布日期 |
2010.04.06 |
申请号 |
US20050573458 |
申请日期 |
2005.08.25 |
申请人 |
SANKEN ELECTRIC CO., LTD. |
发明人 |
OTSUKA KOJI;IWAKAMI SHINICHI |
分类号 |
H01L23/48 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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