| 摘要 |
A phase change memory device includes a semiconductor substrate having a plurality of bar-type active areas. A plurality of word lines are arranged in a direction perpendicular to the active areas on the semiconductor substrate, and a first pair of the word lines connected to each other at each first end thereof is arranged alternately with a second pair of the word lines connected to each other at each second end thereof opposite to the first end. Source areas and drain areas are formed in the active areas. Common source areas are each connected to the source areas. A plurality of lower electrodes are connected to the respective drain areas. Phase change layers make contact with every two diagonally adjoining lower electrodes. Upper electrodes are formed on the phase change layers, and bit lines are arranged in a direction of the active areas and are connected to the upper electrodes.
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