发明名称 |
Method for manufacturing SOI substrate |
摘要 |
A method for manufacturing an SOI substrate, including the steps of implanting hydrogen ions from a main surface of a single-crystal silicon substrate having an interstitial oxygen concentration which is equal to or below 1×1018 cm−3; performing an activation treatment with respect to the main surface of at least one of a transparent insulative substrate and the silicon substrate; bonding the main surface of the transparent insulative substrate to the main surface of the silicon substrate at a room temperature; performing a heat treatment with respect to the bonded substrate at a temperature falling within the range of 350° C. to 550° C. and having a cooling rate after the heat treatment that is equal to or below 5° C./minute; and mechanically delaminating a silicon thin film from the silicon substrate to form a silicon film on the main surface of the transparent insulative substrate.
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申请公布号 |
US7691724(B2) |
申请公布日期 |
2010.04.06 |
申请号 |
US20080076422 |
申请日期 |
2008.03.18 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
KAWAI MAKOTO;KUBOTA YOSHIHIRO;ITO ATSUO;TANAKA KOICHI;TOBISAKA YUUJI;AKIYAMA SHOJI |
分类号 |
H01L21/30 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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