发明名称 Wide-bandgap semiconductor devices
摘要 A device 100 comprising a substrate 115 having crystal-support-structures 110 thereon, and a III-V crystal 210. The III-V crystal is on a single contact region 140 of one of the crystal-support-structures. An area of the contact region is no more than about 50 percent of a surface area 320 of the III-V crystal.
申请公布号 US7692198(B2) 申请公布日期 2010.04.06
申请号 US20070676329 申请日期 2007.02.19
申请人 ALCATEL-LUCENT USA INC. 发明人 FRAHM ROBERT;NG HOCK MIN;VYAS BRIJESH
分类号 H01L29/20;H01L33/00 主分类号 H01L29/20
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