VERTICAL SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A vertical semiconductor device and a manufacturing method thereof are provided to reduce the manufacturing costs of a semiconductor device by forming a semiconductor device having a nano wire channel area through a simple process. CONSTITUTION: Single crystal epitaxial patterns of a filler shape contacting a single crystal semiconductor substrate(10) are provided. A gate insulating layer(38) is provided on a channel sidewall of the single crystal epitaxial patterns and on the surface of the semiconductor substrate. A gate electrode(40a) extends and has a line shape surrounding the single crystal epitaxial patterns. A first impurity region(12) is included on a substrate under the base side of the single crystal epitaxial patterns. A second impurity region(42) is included on a contact forming part of the single crystal epitaxial patterns.