NONVOLATILE MEMORY DEVICE AND DRIVING METHOD OF THE SAME

摘要

PURPOSE: A non-volatile memory device and a driving method thereof are provided to improve write operation by improving an operation discharging local bit lines. CONSTITUTION: A write global bit line and a lead global bit line(RGBL0) are coupled with a plurality of local bit lines. A write local column selection transistor selectively interlinks a write global bit line(WGBL0) and each local bit line. A lead local column selection transistor selectively interlinks the lead global bit line and each local bit line(LBL0). The global bit line discharge transistor is coupled to the write global bit line. A local bit line discharge transistor is coupled to the lead global bit line.