发明名称 CIRCUIT FOR GENERATING PUMPING VOLTAGE OF SEMICONDUCTOR MEMORY APPARATUS
摘要 PURPOSE: A pumping voltage generating circuit of a semiconductor memory device is provided to enable a pumping voltage to rapidly reach a target level by generating an oscillator signal according to a first and a second frequency based on a predetermined time. CONSTITUTION: A pumping operation control part(100) generates an oscillator signal if a pump enable signal is enabled. The pumping operation control part generates the oscillator signal of the first frequency during designated time if the pumping enable signal(pump_en) is enabled. The pumping operation control part generates the oscillator signal of the secondary frequency after the designated time. A pumping part(300) executes a pumping operation in response to the oscillator signal. The pumping part executes the pumping voltage through the pumping operation.
申请公布号 KR20100035233(A) 申请公布日期 2010.04.05
申请号 KR20080094477 申请日期 2008.09.26
申请人 HYNIX SEMICONDUCTOR INC. 发明人 CHOI, YOUNG KYOUNG;CHOI, HYANG HWA
分类号 G11C11/4074;G11C5/14 主分类号 G11C11/4074
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