发明名称 |
CIRCUIT FOR GENERATING PUMPING VOLTAGE OF SEMICONDUCTOR MEMORY APPARATUS |
摘要 |
PURPOSE: A pumping voltage generating circuit of a semiconductor memory device is provided to enable a pumping voltage to rapidly reach a target level by generating an oscillator signal according to a first and a second frequency based on a predetermined time. CONSTITUTION: A pumping operation control part(100) generates an oscillator signal if a pump enable signal is enabled. The pumping operation control part generates the oscillator signal of the first frequency during designated time if the pumping enable signal(pump_en) is enabled. The pumping operation control part generates the oscillator signal of the secondary frequency after the designated time. A pumping part(300) executes a pumping operation in response to the oscillator signal. The pumping part executes the pumping voltage through the pumping operation. |
申请公布号 |
KR20100035233(A) |
申请公布日期 |
2010.04.05 |
申请号 |
KR20080094477 |
申请日期 |
2008.09.26 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
CHOI, YOUNG KYOUNG;CHOI, HYANG HWA |
分类号 |
G11C11/4074;G11C5/14 |
主分类号 |
G11C11/4074 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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