NONVOLATILE MEMORY ELEMENT, METHOD FOR RECORDING AND READING THE SAME

摘要

PURPOSE: An information recording method and an information interpretation method of a nonvolatile memory element are provided to improve data maintenance and durability by recording and reading the information by applying an identical voltage to a memory layer. CONSTITUTION: An information storage layer(120) is formed on a lower electrode(110) and comprises ferroelectrics. The information storage layer stores information according to the polarity of a remnant polarization. A memory layer(140) displays a resistance characteristic in case the ferroelectric is reversed-polarized. In case the ferroelectric is not reverse-polarized or in case the ferroelectric is completed, the switching layer(130) shows that the capacitor features are provided. An upper electrode(150) is formed on the memory layer.