发明名称 |
BLANK MASK FOR EUV AND PHOTOMASK MANUFACTURED THEREOF |
摘要 |
<p>PURPOSE: A blank-mask for extreme ultraviolet radiation and a photomask manufactured using the same are provided to produce a blank-mask of excellent quality by reducing a shadowing effect by forming a pattern close to the incident angle of an exposed light by changing the composition ratio of an absorption film, density, and a deposition condition. CONSTITUTION: A reflective film(20) of multilayer is formed on an LTEM(Low Thermal Expansion Material) substrate. The conductive film is formed on a rear side of the LTEM substrate. A capping layer(30) is formed to protect the reflective film. A buffer layer(40) is formed on the capping layer. An absorption film(50) is formed on the buffer layer. A hard mask film(60) is formed on the absorption film.</p> |
申请公布号 |
KR20100035559(A) |
申请公布日期 |
2010.04.05 |
申请号 |
KR20080094994 |
申请日期 |
2008.09.26 |
申请人 |
S&STECH CO., LTD. |
发明人 |
NAM, KEE SOO;CHA, HAN SUN;YANG, SIN JU;YANG, CHUL KYU |
分类号 |
H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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