发明名称 |
Nonvolatile memory with active and passive wear leveling |
摘要 |
A memory system including a nonvolatile semiconductor storage device includes: a nonvolatile memory unit that includes a first data area in which data is frequently rewritten and a second data area in which data is hardly rewritten; and a control unit. The control unit sequentially selects logical block addresses in the second data area in which data is hardly rewritten and updates physical block addresses at new rewriting destinations in the first data area in which data is frequently rewritten to physical block addresses corresponding to the logical block addresses selected.
|
申请公布号 |
US7694066(B2) |
申请公布日期 |
2010.04.06 |
申请号 |
US20060594082 |
申请日期 |
2006.11.08 |
申请人 |
SONY CORPORATION |
发明人 |
SAKUI KOJI;SUZUKI KAZUHIRO;YOSHIOKA DAISUKE;KAMIMURA KAZUTO;ISHIMOTO TAKESHI;SUMINO JUN |
分类号 |
G06F13/00 |
主分类号 |
G06F13/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|