发明名称 SUBSTRATE CLEANING METHOD FOR REMOVING OXIDE FILM
摘要 <P>PROBLEM TO BE SOLVED: To provide a cleaning method for a surface treatment by removing natural oxide films or organic materials without impairing the flatness of a substrate surface. <P>SOLUTION: Radicals in plasma are introduced into a processing chamber through radical passage holes (111) of a plasma confining electrode plate (110) for separating plasma, and a processing gas is introduced to the processing chamber and is mixed with the radicals in the processing chamber (121). The substrate surface is cleaned by the mixed atmosphere of the radicals and the processing gas. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010074065(A) 申请公布日期 2010.04.02
申请号 JP20080242665 申请日期 2008.09.22
申请人 CANON ANELVA CORP 发明人 KIYONO TAKUYA;IKEMOTO MANABU;MASHITA KIMIKO
分类号 H01L21/304;H01L21/3065;H05H1/46 主分类号 H01L21/304
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